domingo, 14 de febrero de 2010

A Comparison of CMOS and BiCMOS mm-Wave Receiver Circuits for Applications at 60GHz and Beyond


A Comparison of CMOS and BiCMOS
mm-Wave Receiver Circuits for Applications
at 60GHz and Beyond
Sharon Malevsky and John R. Long
Electronic Research Laboratory / DIMES
Delft University of Technology, the Netherlands
Abstract
Implicit in the design of a 60GHz receiver front-end is the reciesquirement  amplification and gain flatness in order to support advanced modulation schemes. As we have seen from
lower frequency wireless systems, the choice of technology often
dictates the system architecture. While either silicon CMOS or
silicon Bipolar technology could be used for implementation, cost,
availability, performance and time to market constraints typically
dictate the technology choice. The trade-offs between CMOS and
Bipolar/BiCMOS technologies for mm-wave receiver circuits are
outlined in this paper. Realizing low-noise performance and gain
flatness over a wide bandwidth is used as a case study from both
the circuit and system points of view.
1. Introduction
Continued scaling of CMOS and BiCMOS technologies will eventually allow
RFIC designers to exploit the unlicensed 7GHz of free spectrum around
60GHz. The proposed 802.15.3c standard for short-range, gigabit/s communication
in the unlicensed bands at 60GHz may be used an adapter for
any gigabit/s data source or sink requiring a short-range wireless link. The
spectral allocations vary with region as shown in the following table.
The small physical size of passive circuit elements at mm-wave frequennity
to interferers due to attenuation (see Fig. 1) of the transmitted signal
327
Power Amplifiers from Wireline to RF; Very High Frequency Front Ends, 327–341.
© 2008 Springer Science + Business Media B.V.

Por: Tirso Ramírez
C.I.:18392099
EES

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